BF9024SPD-M byd microelectronics co., ltd p-channel mosfet and schottky diode datasheet es-byd-wdzce03d-070 rev.a/1 page 1of 6 general description the BF9024SPD-M uses advanced trench technology to provide excellent r ds (on) and low gate charge. this device is suitable for us ed as a load switch or in pwm applications. features mosfet z v ds (v) = -20v z i d = -2.7a z low on-state resistance r ds (on) < 90m ? ? . (v gs = -4.5v) r ds (on) < 120m ? ? .(v gs = -2.5v) schottky diode z v f =0.42v absolute maximum ratings (ta = 25 ) parameter symbol ratings unit mosfet drain to source voltage (mosfet and schottky) v dss -20 v gate to source voltage v gss 8 v drain current (dc) i d(dc) -2.7 a drain current (pulse) i d(pulse) -10 a maximun power dissipation a p d 1.1 w channel temperature t ch 150 storage temperature t stg -55~+150 schottky diode reverse voltage v ka 20 v average forward current i f 1 a pulsed forward current i fm 7 a maximun power dissipation a p d 0.96 w storage temperature t stg -55~+150 note a. mounted on fr4 board of 1?x1?. caution: these values must not be ex ceeded under any conditions. ordering information z BF9024SPD-M z dfnwb3*1.8-8l 1 8 4 5 23 6 7 1,2 anode; 3 source; 4 gate 5,6 drain; 7,8 kathode k: kathode;d: drain k d www.datasheet.in
BF9024SPD-M datasheet es-byd-wdzce03d-070 rev.a/1 page 2of 6 byd microelectronics co., ltd. electrical characteristics (t c = 25 ) characteristic symbol test conditions min. typ. max. unit mosfet zero gate voltage drain current i dss v ds = -20v,v gs =0v -1 a gate leakage current i gss v gs = 8v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = - 0.25ma -0.45 -1 v forward transfer admittance |y fs | v ds = -10v, i d = -2a 7 s v gs = -4.5v,i d = -2a 73 90 m ? drain to source on-state resistance r ds(on) v gs = -2.5v,i d = -2a 99 120 m ? input capacitance c iss 427 pf output capacitance c oss 72 pf reverse transfer capacitance c rss v ds = -10v , v gs =0,f=1mhz 50 pf turn-on delay time t d(on) 15 ns rise time t r 36 ns turn-off delay time t d(off) 36 ns fall time t f v ds = -10v, i d = -1a, v gs = -4.5v, r g =6 ? 30 ns total gate charge q g 5 nc gate to source charge q gs 1.5 nc gate to drain charge q gd v ds = -10v, v gs = -4.5v, i d = -2a 1 nc body diode forward voltage v f(s-d) i f =-0.9a,v gs =0v -0.8 -1.2 v schottky diode forward voltage drop v f i f =0.5a 0.42 0.48 v maximum reverse leakage current i rm v r =20v 0.002 0.1 ma junction capacitance c t v r =10v 35 pf typical characteristics (25 unless noted) mosfet figure 1 threshold voltage vs. temperature figure 2 v dss vs. temperature 0 0.2 0.4 0.6 0.8 1 -50 -10 30 70 110 150 t j ( ) v th (-v) 19 20 21 22 23 24 -50 -10 30 70 110 150 t j ( ) v dss (-v) www.datasheet.in
BF9024SPD-M datasheet es-byd-wdzce03d-070 rev.a/1 page 3of 6 byd microelectronics co., ltd. figure 3 i dss vs. temperature figure 4 i gss vs. temperature 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 -50 -10 30 70 110 150 t j ( ) i dss (-ua) -0.15 -0.09 -0.03 0.03 0.09 0.15 -50 -10 30 70 110 150 t j ( ) i gs s (-ua) i gss + i gs s - figure 5 on-resistance vs. temperature figure 6 on-resistance vs. drain current 40 60 80 100 120 140 -50 -10 30 70 110 150 r ds(on) (m ? ) t j ( ) v gs =-2.5v v gs =-4.5v 40 60 80 100 120 140 0246810 i d (-a) r ds(on) (m ? ) v gs =-2.5v v gs =-4.5v figure 7 on-resistance figure 8 drain to source voltage vs. gate-to-source voltage vs. drain current 0 80 160 240 320 400 012345 v gs (-v) r ds(on) (m ? ) i d =-2a 0 0.3 0.6 0.9 1.2 1.5 0246810 i d (-a) v ds (-v) v gs =-2.5v v gs =-4.5v www.datasheet.in
BF9024SPD-M datasheet es-byd-wdzce03d-070 rev.a/1 page 4of 6 byd microelectronics co., ltd. figure 9 gate charge figure 10 capacitance 0 1 2 3 4 5 012345 q g (nc) v gs (-v) v gs =-4.5v i d =-2a 0 120 240 360 480 600 048121620 v ds (v) c( pf) c iss c oss c rss typical characteristics (25 unless noted) schottky diode figure 11 reverse current figure 12 forward voltage diode vs. junction temperature 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 0306090120150 i r (ma ) t j ( ) v r =10v v r =20v 0.1 1 10 0 0.2 0.4 0.6 0.8 1 v f (v) i f (a) t j =150 t j =25 figure 13 capacitance 0 32 64 96 128 160 0 4 8 121620 c t (pf) v ka (v) www.datasheet.in
BF9024SPD-M datasheet es-byd-wdzce03d-070 rev.a/1 page 5of 6 byd microelectronics co., ltd. package drawing pin #1 identification chamfer 0.150 x 45o 0.650 bsc top view bottom view unit:mm dfnwb3.0*1.8-8l 3.0000.050 1.8000.050 a max ndm min 0.800 0.750 0.700 0.4000.050 0.3500.050 0.8000.050 1.950 ref side view a 0.203 ref. 0.013-0.050 pin 1# dot by marking 0.3000.050 k d note: 1) lead plating thickness: 0-0.050mm. 2 package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10mm per side . 3 the size of the zone ?d? is the same as the ?k?. www.datasheet.in
BF9024SPD-M datasheet es-byd-wdzce03d-070 rev.a/1 page 6of 6 byd microelectronics co., ltd. restrictions on product use ? the information contained herein is subject to change without notice. ? byd microelectronics co., ltd. (short for bme) exerts the greatest possible effort to ensure high quality and reliability. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing bme products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. in developing your designs, please ensure that bme products are used within specified operating ranges as set forth in the most recent bme products specifications. ? the bme products listed in this document are intended for usage in general electronics applications (personal equipment, office equipment, domestic appliances, etc.). these bme products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of bme products listed in this document shall be made at the customer?s own risk. ? bme is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. www.datasheet.in
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